Chinese translation for "mos transistor"
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- mos晶体管
金属氧化物半导体晶体管
Related Translations:
- Example Sentences:
| 1. | V groove mos transistor
槽型栅金属氧化物半导体晶体管 | | 2. | Vertical mos transistor
垂直型金属氧化物半导体晶体管 | | 3. | The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ) , a novel semiconductor device . this new device has shared the advantages of bjt and mos
详细分析了一种新型半导体器件? ?双极压控场效应晶体管( bjmosfet )的结构特点、工作原理，这种器件拥有bjt和mos两者的优点。 | | 4. | With the high development of the quantum circuits , the testability of the circuits will become a very serious problem . the method of testability design for rt circuits is proposed in the end of this paper , which has high testability and low hardware cost . only adding one extra mos transistor and two control ports , it can detect all open and short faults in rt circuits
随着量子电路的飞速发展，由于其本身所特有的高集成度特点，电路的测试必然会成为越来越严重的问题，因此论文在最后就电路中常见的开路、短路故障提出了rt电路的可测试性设计方法，并针对具体的mobile电路进行了可测试性设计， pspice模拟结果表明达到了可测试的目的。 | | 5. | In the fifth chapter , a new fully differential operational amplifier with voltage and current - mode negative feedback has been proposed , which can stabilize its quiescent operation point , using the characteristic of mos transistors which operate in the triode region acting as active variable resistor , a fully differential fourth - order chebyshev low - pass filter with tunable frequency and bessel low - pass filter with accurate group delay based on r - mosfet - c and operational amplifier has been designed
第五章：提出了一种新的既具有电压共模负反馈又同时具有电流共模负反馈的全差分运算放大器电路，能较好地稳定电路的静态工作点，并应用mos管工作在线性区可作有源可变电阻用的特性设计得到了截止频率可连续调节的高性能r - mosfet - c 、运放结构切比雪夫( chebyshev )和精确群时延值贝塞尔( bessel )低通滤波器。 | | 6. | Secondly , the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study . especially , the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate , irradiation dose , irradiation temperature , bias voltage , device structure as well as annealing condition is explored emphatically
在此基础上，对bf _ 2 ~ +注入硅栅si sio _ 2系统低剂量率辐照效应进行了深入系统的研究，着重研究了bf _ 2 ~ -注入mos管阈值电压漂移( vth和vit 、 vot )与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。 | | 7. | In the fifth chapter , the performance of transconductor - capacitor ( gm - c ) continuous time filter is discussed . due to process variation and parasitics , an automatic tuning is designed for center frequency and quality factor q . also , in this chapter , a two order bandpass filter with tunable is designed . the effects on filter ' s performance of the non - idealities of a cmos ota are studied and the computer simulations at the mos transistor level are carried out
第五章讨论了跨导电容连续时间滤波器的性能特点，设计了一个中心频率可调的二阶带通滤波器，为了使滤波器参数自动调整到设计标准值，从而保持其设计值的实现精度，论文给出了片内自校正(可调谐)环节。 | | 8. | After introduction of the tranlinear loop principal , the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower . as for modern integrated circuit , the model of mos transistor , the active resistance and the current mirror integrated circuit formed by mos transistor are introduced . the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation
针对现代集成电路的工艺,本文对mos晶体管的工作原理进行了简要的叙述,讨论了有源电阻和电流镜的实现方法,并利用mos晶体管的亚阈值特性组成混合跨导线性回路完成对应的电压跟随器的设计,推导出了基于cmos技术的电流控制传送器。 |
- Similar Words：
- "mos shift register" Chinese translation, "mos static memory" Chinese translation, "mos structure" Chinese translation, "mos substrate" Chinese translation, "mos technology" Chinese translation, "mos vlsi" Chinese translation, "mos wafer" Chinese translation, "mosa" Chinese translation, "mosaburo" Chinese translation, "mosaddeq" Chinese translation
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